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1

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Radhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

2

GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

Ravikiran, Lingaparthi, Radhakrishnan, K., Dharmarasu, Nethaji, Agrawal, Manvi, Wang, Zilong, Bruno, Annalisa, Soci, Cesare, Lihuang, Tng, Ang, Kian Siong

Journal:

IEEE Sensors Journal

Year:

2017

Language:

english

File:

PDF, 1.64 MB

english, 2017

3

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, G.I. Ng, C.H. Lee, Z.H. Liu, K. Radhakrishnan, N. Dharmarasu, Z. Sun

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 526 KB

english, 2010

4

Low-energy proton-induced defects in n+/p InGaP solar cells

N Dharmarasu, M Yamaguchi, A Khan, T Takamoto, T Ohshima, H Itoh, M Imaizumi, S Matsuda

Journal:

Solar Energy Materials and Solar Cells

Year:

2003

Language:

english

File:

PDF, 105 KB

english, 2003

5

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

M. Agrawal, N. Dharmarasu, K. Radhakrishnan, L. Ravikiran

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 950 KB

english, 2012

6

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Agrawal, M.

Journal:

Thin Solid Films

Year:

2020

File:

PDF, 637 KB

2020

7

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Stress optimization of AlN buffer in AlN/GaN/AlN Quantum well for DH-HEMT on SiC by PA-MBE

Patwal, Shashank, Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K.

Year:

2019

Language:

english

File:

PDF, 169 KB

english, 2019

8

Lateral junctions for high-density integration of optoelectronic devices

P.O Vaccaro, N Dharmarasu, S Saravanan, J.M Zanardi Ocampo, K Kubota, N Saito

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 352 KB

english, 2004

9

On the enhancement of effective barrier height in Tin-GaAs Schottky barrier diodes

S. Arulkumaran, J. Arokiaraj, N. Dharmarasu, J. Kumar

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

10

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

Agrawal, M., Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Karthikeyan, G. S., Zheng, Y.

Journal:

Year:

2017

Language:

english

File:

PDF, 15.10 MB

english, 2017

11

A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

Zheng, Y., Agrawal, M., Dharmarasu, N., Radhakrishnan, K., Patwal, S.

Journal:

Applied Surface Science

Year:

2019

Language:

english

File:

PDF, 1.54 MB

english, 2019

12

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.86 MB

english, 2015

13

Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

Agrawal, Manvi, Radhakrishnan, K., Dharmarasu, Nethaji, Pramana, Stevin Snellius

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.20 MB

english, 2015

14

[IEEE Second International Conference on Systems (ICONS'07) - Martinique, France (2007.04.22-2007.04.28)] Second International Conference on Systems (ICONS'07) - Optics in Computer Architectures: Basis of WDM, Technologies and Potentials

Wang, Y., Kusserrow, T., Irmer, S., Hasse, A., Bartels, M., Dharmarasu, N., Hillmer, H.

Year:

2007

Language:

english

File:

PDF, 1.63 MB

english, 2007

15

Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters

Hasse, A., Irmer, S., Daleiden, J., Dharmarasu, N., Hansmann, S., Hillmer, H.

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 158 KB

english, 2006

16

Impact of Boron and Gallium on Defects Production in Silicon

Khan, Aurangzeb, Dharmarasu, Nethaji, Yamaguchi, Masafumi, Araki, Kenji, Vu, Tuong K., Saga, Tatsuo, Abe, Takao, Annzawa, Osamu, Imaizumi, M., Matsuda, Sumio

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 226 KB

english, 2000

17

Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

Ravikiran, L, Radhakrishnan, K, Dharmarasu, N, Agrawal, M, Wang, Zilong, Bruno, Annalisa, Soci, Cesare, Lihuang, Tng, Siong, Ang Kian

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.55 MB

english, 2016

18

Raman Scattering Investigation of Surface Modification in Heat-Treated BaFCl

B. Sundarakkannan, R. Kesavamoorthy, N. Dharmarasu, V. Sankara Sastry

Journal:

physica status solidi (a)

Year:

2000

Language:

english

File:

PDF, 201 KB

english, 2000

19

Investigations on the CdS passivated anodic oxide–InP interface for MOS structures

R.R Sumathi, M Senthil Kumar, N Dharmarasu, J Kumar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 176 KB

english, 1999

20

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, Aurangzeb, Yamaguchi, Masafumi, Ohshita, Y., Dharmarasu, N., Araki, K., Abe, Takao, Itoh, Hisayoshi, Ohshima, T., Imaizumi, M., Matsuda, S.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 386 KB

english, 2001

21

Reference Module in Materials Science and Materials Engineering || Compound Semiconductors ☆

Year:

2017

Language:

english

File:

PDF, 2.86 MB

english, 2017

22

Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications

Kricke, Alexander, Joodaki, Mojtaba, Dharmarasu, Nethaji, Kompa, Guenter, Hillmer, Hartmut

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 322 KB

english, 2007

23

SPIE Proceedings [SPIE Photonics Europe - Strasbourg, France (Monday 7 April 2008)] MEMS, MOEMS, and Micromachining III - Light concentrating micromirror arrays for photovoltaics

Ackermann, J., Urey, Hakan, Setyawati, O., Viereck, V., Dharmarasu, N., Hillmer, H.

Year:

2008

Language:

english

File:

PDF, 902 KB

english, 2008

24

[IEEE 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - Kuching, Malaysia (2019.7.3-2019.7.5)] 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - Pt/AlGaN/GaN HEMT based ammonia gas sensors

Ranjan, A., Agrawal, M., Radhakrishnan, K., Dharmarasu, N.

Year:

2019

Language:

english

File:

PDF, 439 KB

english, 2019

25

Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics

N. Dharmarasu, S. Arulkumaran, R.R. Sumathi, P. Jayavel, J. Kumar, P. Magudapathy, K.G.M. Nair

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1998

Language:

english

File:

PDF, 172 KB

english, 1998

26

Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Agrawal, M., Dharmarasu, N., Radhakrishnan, K., Ravikiran, L.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 975 KB

english, 2013

27

Post Annealing Studies of C60 Ion Implanted Thin Films

Dharmarasu, Nethaji, Narayanan, Kannan L., Kojima, Nabuaki, Ohshita, Yoshio, Yamaguchi, Masafumi

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 69 KB

english, 2000

28

Investigations on H+ and He+ implantation effects in n-InP Using Raman Scattering

N. Dharmarasu, B. Sundarakkannan, R. Kesavamoorthy, K.G.M. Nair, J. Kumar

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 137 KB

english, 1999

29

Electron spin resonance studies on defects in phosphorus ion-implanted C60 films

N.F Fahim, N Kojma, M Yamaguchi, Y Ohshita, A.E Eid, N Dharmarasu

Journal:

Solar Energy Materials and Solar Cells

Year:

2003

Language:

english

File:

PDF, 137 KB

english, 2003

30

Majority- and minority-carrier deep level traps in proton-irradiated n[sup +]/p-InGaP space solar cells

Dharmarasu, Nethaji, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 292 KB

english, 2002

31

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

Dharmarasu, Nethaji, Yamaguchi, Masafumi, Khan, Aurangzeb, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sum

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 265 KB

english, 2001

32

[IEEE 2016 International Conference on Optical MEMS and Nanophotonics (OMN) - Singapore, Singapore (2016.7.31-2016.8.4)] 2016 International Conference on Optical MEMS and Nanophotonics (OMN) - Characterization of highly-doped GaN as a new material for plasmonic applications

Wetterau, L., Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Kusserow, T.

Year:

2016

Language:

english

File:

PDF, 369 KB

english, 2016

33

Lateral p–n junctions for high-density LED arrays

Pablo O. Vaccaro, A. Vorobev, N. Dharmarasu, T. Fleischmann, J.M. Zanardi Ocampo, S. Saravanan, K. Kubota, T. Aida

Journal:

Microelectronics Journal

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

34

Realization of two-dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA-MBE

N. Dharmarasu, K. Radhakrishnan, Z. Z. Sun, M. Agrawal

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 427 KB

english, 2011

35

Annealing behaviour of 1 MeV hydrogen-implanted LEC grown InP

J. Arokiaraj, S. Arulkumaran, N. Dharmarasu, J. Kumar

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 204 KB

english, 1995

36

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Ravikiran, L., Radhakrishnan, K., Munawar Basha, S., Dharmarasu, N., Agrawal, M., Manoj kumar, C. M., Arulkumaran, S., Ng, G. I.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

37

Comprehensive Microsystems || Compound Semiconductors

Dharmarasu, Nethaji

Year:

2008

Language:

english

File:

PDF, 1.45 MB

english, 2008

38

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E., Ing, Ng Geok

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.79 MB

english, 2012

39

[IEEE 28th IEEE Photovoltaic Specialists Conference - Anchorage, AK, USA (15-22 Sept. 2000)] Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) - The effects of boron and phosphorous ion implantation in C/sub 60/ thin films

Sakai, T., Dharmarasu, N., Goetzberger, O., Kojima, N., Ohshita, Y., Yamaguchi, M.

Year:

2000

Language:

english

File:

PDF, 232 KB

english, 2000

40

SPIE Proceedings [SPIE Photonics Europe - Strasbourg, France (Monday 7 April 2008)] MEMS, MOEMS, and Micromachining III - Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices

Kusserow, T., Ferwana, S., Nakamura, T., Hayakawa, T., Dharmarasu, N., Vengatesan, B., Hillmer, H., Urey, Hakan

Year:

2008

Language:

english

File:

PDF, 1.41 MB

english, 2008

41

Current-voltage characteristics of low energy proton and alpha particle irradiated Au and Schottky barrier diodes

S Arulkumaran, J Arokiaraj, N Dharmarasu, J Kumar, P Magudapathy, K.G.M Nair

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 372 KB

english, 1997

42

Effects of the ion energy on damage production in MeV ion-implanted GaAs

W Wesch, E Wendler, N Dharmarasu

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2001

Language:

english

File:

PDF, 134 KB

english, 2001

43

[IEEE 2008 IEEE/LEOS Internationall Conference on Optical MEMs and Nanophotonics - Freiburg, Germany (2008.08.11-2008.08.14)] 2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics - Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters

Kusserow, Thomas, Zamora, Ricardo, Sonksen, Julian, Dharmarasu, Nethaji, Hillmer, Hartmut, Nakamura, Tetsuji, Hayakawa, Tetsuo, Vengatesan, Balasubramanian

Year:

2008

Language:

english

File:

PDF, 1001 KB

english, 2008

44

Comparison between the reversal temperature of IBIEC–IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs

E Wendler, N Dharmarasu, E Glaser

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 146 KB

english, 1999

45

Investigations of the Electrical and Structural Characteristics of 50 MeV 7Li Implanted SI-InP

N. Dharmarasu, S. Arulkumaran, R. R. Sumathi, P. Jayavel, J. Kumar, K. Asokan, D. Kanjilal

Journal:

physica status solidi (a)

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

46

[IEEE IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006. - Big Sky, MT, USA (2006.08.21-2006.08.24)] IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006. - Tailored Stress in InP/GaInAs Layers for InP/Air-Gap DBR-Filters with Photonic Crystals

Kusserow, T., Dharmarasu, N., Hillmer, H.

Year:

2006

Language:

english

File:

PDF, 512 KB

english, 2006

47

Electrical and optical properties of the B[sup +] and P[sup +] implanted C[sub 60] thin films

N. Dharmarasu, T. Sakai, N. Kojima, M. Yamaguchi, Y. Ohshita, K. L. Narayanan

Year:

2001

Language:

english

File:

PDF, 315 KB

english, 2001

48

[IEEE 2019 IEEE Asia-Pacific Microwave Conference (APMC) - Singapore, Singapore (2019.12.10-2019.12.13)] 2019 IEEE Asia-Pacific Microwave Conference (APMC) - Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

Mateos, Javier, Nethaji, Dharmarasu, Radhakrishnan, K, Gonzalez, Tomas, Iniguez-de-la-Torre, Ignacio, Garcia, Sergio, Perez, Susana, Gaquiere, Christophe, Ducournau, Guillaume, Lesecq, Marie, Agrawal,

Year:

2019

Language:

english

File:

PDF, 7.87 MB

english, 2019

49

Post Annealing Studies Of C60 Ion Implanted Thin Films

Dharmarasu, Nethaji, Narayanan, Kannan L., Kojima, Nabuaki, Ohshita, Yoshio, Yamaguchi, Masafumi

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 264 KB

english, 2000

50

Raman scattering studies in H+ and He+ implanted n-GaAs

N. Dharmarasu, B. Sundarakkannan, R. Kesavamoorthy, K.G.M. Nair, J. Kumar

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1998

Language:

english

File:

PDF, 181 KB

english, 1998

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